Fast Switching 1200V Normally-Off SiC VJFET Power Modules
نویسندگان
چکیده
An all SiC based power module for use in high frequency and high efficiency applications has been developed. Using parallel combinations of 1200V enhancement mode SiC VJFETs and Schottky diodes, a total on-resistance of only 10m was achieved at 100A drain current in a commercially available standard module configured as a half-bridge circuit. Careful attention to module layout, gate driver design, and the addition of optimized snubbers resulted in excellent switching waveforms with low total switching losses of 1.25mJ when switching 100A at 150°C. David C. Sheridan and Jeffrey B. Casady, SemiSouth Laboratories, Starkville, USA
منابع مشابه
SiC MOSFET Module Replaces up to 3x Higher Current Si IGBT Modules in Voltage Source Inverter Application
February 2013 www.bodospower.com INTRODUCTION SiC is currently the only wide bandgap material to address the power electronics market needs for high performance 1200V and 1700V devices. SiC diode technology has thrived in the market for more than a decade, and many switches have recently become available to enable “all-SiC” circuit solutions. For example, in November 2012, Cree announced the in...
متن کاملHigh Temperature (250 °c) Sic Power Module for Military Hybrid Electrical Vehicle Applications
In this paper, the authors present a line of newly developed high performance SiC power modules, HT-2000, for military systems and applications. The HT-2000 series of modules are rated to 1200V, are operational to greater than 100A, can perform at temperatures in excess of 250 °C, and can be constructed with SiC MOSFETs, JFETs, or BJTs. The newly developed module implements a novel ultra-low pa...
متن کاملDesign of 1.7 to 14kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
In this paper, a high voltage normally-off trenched-and-implanted vertical JFET (TIVJFET) in 4H-SiC is investigated by way of two-dimensional numerical simulations. The structure is simple to fabricate and is expected to be able to achieve a high current density. Detailed designs are presented for 1.7kV to 14kV normally-off 4H-SiC VJFETs. A good agreement has been reached between computer model...
متن کاملCree Silicon Carbide Power White Paper: Highly Efficient, and Compact ZVS Resonant Full Bridge Converter Using 1200V SiC MOSFETs
Rev. Abstract The most recent version (C2MTM) of Silicon Carbide (SiC) devices is used in a Zero Voltage Switching (ZVS) converter application. A 1200V, 160mohm SiC MOSFET from Cree Inc. is used to design a high-frequency ZVS LLC resonant fullbridge (FB) DC/DC converter. With the outstanding advantages of SiC MOSFET, which has lower junction capacitance and low-on-state resistor compared to a s...
متن کاملEfficiency Improvement with Silicon Carbide Based Power Modules - ISSUE 6 – SEPTEMBER 2009
Whereas SiC switches have the overall lowest dynamic losses, they show higher static losses due to the lack of conductivity modulation and the necessary chip size limitations due to the still high SiC base material price. The frequency dependence of the total losses of the various 1200V configurations (Si-IGBT + Si freewheeling diode, Si IGBT + SiC Schottky diode, SiC-JFET cascode plus internal...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2010